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Home ยป Exploiting Memory Device Wear-Out Dynamics to Improve NAND Flash Memory System Performance
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Exploiting Memory Device Wear-Out Dynamics to Improve NAND Flash Memory System Performance

Yangyang Pan, Rensselaer Polytechnic Institute, USA

Guiqiang Dong, Rensselaer Polytechnic Institute, USA

Tong Zhang, Rensselaer Polytechnic Institute, USA

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BibTeX
@inproceedings {267004,
author = {Yangyang Pan and Guiqiang Dong and Tong Zhang},
title = {Exploiting Memory Device {Wear-Out} Dynamics to Improve {NAND} Flash Memory System Performance},
booktitle = {9th USENIX Conference on File and Storage Technologies (FAST 11)},
year = {2011},
address = {San Jose, CA},
url = {https://www.usenix.org/conference/fast11/exploiting-memory-device-wear-out-dynamics-improve-nand-flash-memory-system},
publisher = {USENIX Association},
month = feb
}
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Paper: 
http://www.usenix.org/events/fast11/tech/full_papers/Pan.pdf
Paper (HTML): 
http://www.usenix.org/events/fast11/tech/techAbstracts.html#Pan

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